2SA1200_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1200
Transistors
Features
High Voltage : VCEO = -150V
High Transition Frequency : fT = 120MHz(typ.)
Small Flat Package
Complementary to 2SC2880
1.70 0.1
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Jumction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base - emitter voltage
DC current gain
Collector output capacitance
Transition frequency
■ Classification of hfe
Type
Range
Marking
2SA1200-O
70-140
BO
2SA1200-Y
120-240
BY
Symbol
Rating
Unit
VCEO
-150
V
VCBO
-150
V
VEBO
-5
V
IC
-50
mA
IB
-10
mA
PC
500
mW
Tj
150
Tstg
-55 to +150
Symbol
Test Conditions
VCBO Ic= -100uA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100uA， IC=0
ICBO VCB= -150 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-10 mA, IB=-1mA
VBE(sat) IC=-10 mA, IB=-1mA
VBE VCE=-5V,IC= -30 mA
hFE VCE= -5V, IC= -10mA
Cob VCB= -10V, IE= 0,f=1MHz
fT
VCE= -30V, IC= -10mA
Min Typ Max Unit
-150
-150
V
-5
-0.1
uA
-0.1
-0.8
-1.2 V
-0.9
70
240
4
5
pF
120
MHz
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