2SA1182_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1182
Transistors
■ Features
● Collector Current Capability IC=-0.5A
● Collector Emitter Voltage VCEO=-32V
● Complementary to 2SC2859.
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
TJ
Tstg
Rating
-40
-32
-5
-500
-50
150
125
-55 to 125
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -40 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-100 mA, IB=-10mA
VBE(sat) IC=-100 mA, IB=-10mA
VBE VCE=-1V,IC=-100 mA
hFE(1) VCE= -1V, IC= -100mA
hFE(2) VCE=- 6V, IC= -400mA *1
Cob VCB= -6V, IE= 0,f=1MHz
fT
VCE= -6V, IC= -20mA
*1: hFE ₍₂₎ classification O: 25 (min), Y: 40 (min), GR: 70 (min)
■ Classification of hfe(1)
Type
Range
Marking
2SA1182-O
70-140
ZO
2SA1182-Y
120-240
ZY
2SA1182-G
200-400
ZG
Unit
V
mA
mW
℃
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-40
-32
V
-5
-0.1
uA
-0.1
-0.1 -0.25
-1.2 V
-0.8 -1
70
400
25
13
pF
200
MHz
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