2SA1179 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP)

SMD Type
TransistIoCrs
PNP Epitaxial Planar Silicon Transistors
2SA1179
Features
High breakdown voltage
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Jumction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-55
V
VCEO
-50
V
VEBO
-5
V
IC
-150
mA
PC
200
mW
Tj
150
Tstg
-50 to 150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current Gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
Testconditons
VCBO IC = -10ìA , IE = 0A
VCEO IC = -1mA , RBE =
VEBO IE = -10ìA , IC = 0A
ICBO VCB = -35V , IE = 0A
IEBO VEB = -4V , IC = 0
hFE VCE = -6V , IC = -1mA
VCE(sat) IC = -50mA , IB = -5mA
VBE(sat) IC = -50mA , IB = -5mA
Cob VCB = -6V , IE=0 ,f = 1MHz
fT VCE = -6V , IC = -10mA
Min Typ Max Unit
-55
V
-50
V
-5
V
-0.1
A
-0.1
A
200
400
-0.5 V
-1.0 V
4.0
pF
180
MHz
Marking
Marking
M
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