2SA1171_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
TransistIoCrs
PNP Transistors
2SA1171
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
Unit: mm
Features
Low frequency small signal amplifier
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
0.1 +0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-90
V
VCEO
-90
V
VEBO
-5
V
IC
-50
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
DC current transfer ratio
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -1 mA，RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -75 V , IE=0
IEBO VEB= -5 V , IC=0
VCE(sat) IC=-10 mA, IB=-1mA
VBE(sat) IC=-10 mA, IB=-1mA
VBE VCE=-12V,IC=-2mA
hFE VCE=-12V,IC=-2mA
Cob VCB= -25 V , IE=0, f=1MHz
fT
VCE=-12V, IC=-2 mA
■ Classification of hfe
Type
2SA1171-D
Range
250-500
Marking
PD
2SA1171-E
400-800
PE
Min Typ Max Unit
-90
-90
V
-5
-0.5
uA
-0.1
-0.5
-1.2 V
-0.75
250
800
1.6
pF
200
MHz
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