2SA1163 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPUFIER APPLICATIONS)

SMD Type
Silicon PNP Epitaxial Type
2SA1163
Transistors
Features
High voltage.
Small package.
High hFE.
Low noise.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-120
V
VCEO
-120
V
VEBO
-5
V
IC
-100
mA
IB
-20
mA
PC
150
mW
Tj
125
Tstg
-55 to +125
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Testconditons
ICBO VCB = -120 V, IE = 0
IEBO VEB = -5 V, IC = 0
hFE VCE = -6 V, IC = -2 mA
VCE (sat) IC = -10 mA, IB = -1 mA
fT VCE = -6 V, IC = -1 mA
Cob VCB = -10 V, IE = 0, f = 1 MHz
NF VCB=-6 V, IC=-0.1 mA, f=1 kHz,Rg=10 kÙ
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
200
700
-0.3 V
100
MHz
4
pF
1.0 10 dB
hFE Classification
Marking
Rank
hFE
CG
GR
200 400
CL
BL
350 700
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