2SA1122_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Features
Low frequency amplifier
TransistIoCrs
PNP Transistors
2SA1122
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
Unit: mm
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-55
V
VCEO
-55
V
VEBO
-5
V
IC
-100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Symbol
Test conditions
V(BR)CBO IC = -100uA, IE = 0
V(BR)CEO IC = -1 mA, RBE =
V(BR)EBO IE = -100uA, IC = 0
ICBO VCB = -30 V, IE = 0
IEBO VEB = - 4V, IC = 0
hFE VCE = -12 V, IC = -2 mA
VCE(sat) IC = -10 mA, IB = -1 mA
VBE VCE = -12 V, IC = -2 mA
Min Typ Max Unit
-55
V
-55
V
-5
V
-0.1 uA
-0.1 uA
160
800
-0.5 V
-0.75 V
hFE Classification
Type
Range
Marking
2SA1122-C
160-320
CC
2SA1122-D
250-500
CD
2SA1122-E
400-800
CE
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