2SA1122 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

SMD Type
TransistIoCrs
Silicon PNP Epitaxial
2SA1122
Features
Low frequency amplifier
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-55
V
VCEO
-55
V
VEBO
-5
V
IC
-100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Symbol
Testconditons
V(BR)CBO IC = -10 ìA, IE = 0
V(BR)CEO IC = -1 mA, RBE =
V(BR)EBO IE = -10 ìA, IC = 0
ICBO VCB = -30 V, IE = 0
IEBO VEB = -2 V, IC = 0
hFE VCE = -12 V, IC = -2 mA
VCE(sat) IC = -10 mA, IB = -1 mA
VBE VCE = -12 V, IC = -2 mA
Min Typ Max Unit
-55
V
-55
V
-5
V
-0.5 ìA
-0.5 ìA
160
800
-0.5 V
-0.75 V
hFE Classification
Marking
hFE
CC
160 320
CD
250 500
CE
400 800
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