2SA1121_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Features
● Low frequency amplifier
● Complementary pair with 2SC2618
TransistIoCrs
PNP Transistors
2SA1121
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
Unit: mm
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-35
V
VCEO
-35
V
VEBO
-4
V
IC
-500
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
DC current transfer ratio
Symbol
Test Conditions
VCBO Ic= -100 uA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -30 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-150 mA, IB=-15mA
VBE(sat) IC=-150 mA, IB=-15mA
VBE IC=-10 mA, VCE=-3V
IC=-10 mA, VCE=-3V
hFE
IC=-500 mA, VCE=-3V
hFE(1) Classification
Type
2SA1121-C
Range
100-200
Marking
SC
2SA1121-D
160-320
SD
Min Typ Max Unit
-35
-35
V
-4
-0.1
uA
-0.1
-0.2 -0.6
-1.2 V
-0.64
100
320
10
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