2SA1121 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

SMD Type
TransistIoCrs
Silicon PNP Epitaxial
2SA1121
Features
Low frequency amplifier
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-35
V
VCEO
-35
V
VEBO
-4
V
IC
-500
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Collector to emitter saturation voltage
DC current transfer ratio
Base to emitter voltage
Symbol
Testconditons
V(BR)CBO IC = -10 mA, IE = 0
V(BR)CEO IC = -1 mA, RBE =
V(BR)EBO IE = -10 mA, IC = 0
ICBO VCB = -20 V, IE = 0
VCE(sat) IC = -150 mA, IB = -15 mA
hFE VCE = -3 V, IC = -10 mA
VBE VCE = -3 V, IC = -10 mA
hFE Classification
Marking
hFE
SB
60 120
SC
100 200
SD
160 320
Min Typ Max Unit
-35
V
-35
V
-4
V
-0.5 ìA
-0.2 -0.6 V
60
320
-0.64
V
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