2SA1052_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Features
Low frequency amplifier
PNP Transistors
2SA1052
TransistIoCrs
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
Unit: mm
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
0.15 +0.02
-0.02
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-30
V
VEBO
-5
V
IC
-100
mA
IE
100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
DC current gain
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -20 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-10 mA, IB=-1mA
VBE(sat) IC=-10 mA, IB=-1mA
VBE VCE= -12 V , IC=-2mA
hFE VCE= -12V, IC= -2mA
hFE Classification
Type
Range
Marking
2SA1052-B
100-200
MB
2SA1052-C
160-320
MC
2SA1052-D
250-500
MD
Min Typ Max Unit
-30
-30
V
-5
-0.1
uA
-0.1
-0.2
-1.2 V
-0.75
100
500
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