2SA1052 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

SMD Type
TransistIoCrs
Silicon PNP Epitaxial
2SA1052
Features
Low frequency amplifier
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-30
V
VEBO
-5
V
IC
-100
mA
IE
100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Symbol
Testconditons
V(BR)CBO IC = -10 ìA, IE = 0
V(BR)CEO IC = -1 mA, RBE =
V(BR)EBO IE = -10 ìA, IC = 0
ICBO VCB = -20 V, IE = 0
IEBO VEB = -2 V, IC = 0
hFE VCE = -12 V, IC = -2 mA
VCE(sat) IC = -10 mA, IB = -1 mA
VBE VCE = -12 V, IC = -2 mA
1.Base
2.Emitter
3.collector
Min Typ Max Unit
-30
V
-30
V
-5
V
-0.5 mA
-0.5 mA
100
500
-0.2 V
-0.75 V
hFE Classification
Marking
hFE
MB
100 200
MC
160 320
MD
250 500
www.kexin.com.cn ¹