2SA1036_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
2SA1036 (2SA1036K)
Features
Large IC. ICMax. = -500mA
Low VCE(sat). Ideal for low-voltage operation.
SOT-23-3
2.9 +0.2
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.2
Unit: mm
0.15 ^+0.02
-0.02
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current *
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-32
V
VEBO
-5
V
IC
-0.5
A
PC
0.2
W
Tj
150
Tstg
-55 to +150
* PC max. must not be exceeded.
1. Base
2. Emitter
3. Collector
Electrical Characteristics Ta = 25
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -20 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-100 mA, IB=-1mA
VBE(sat) IC=-100 mA, IB=-1mA
hFE VCE= -3V, IC= -10mA
Cob VCB= -10V, IE= 0,f=1MHz
fT VCE= -5V, IE=- 20mA,f=100MHz
hFE Classification
Type
2SA1036/K-P
Range
Marking
82-180
HP
2SA1036/K-Q
120-270
HQ
2SA1036/K-R
180-390
HR
Min Typ Max Unit
-40
-32
V
-5
-100
nA
-100
-0.4
V
-1.2
82
390
7
pF
200
MHz
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