2SA1036K Datasheet, PDF (1/1 Pages) Rohm – Medium Power Transistor

SMD Type
Medium Power Transistor
2SA1036K
Transistors
Features
Large IC. ICMax. = -500mA
Low VCE(sat). Ideal for low-voltage operation.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current *
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-40
V
VCEO
-32
V
VEBO
-5
V
IC
-0.5
A
PC
0.2
W
Tj
150
Tstg
-55 to +150
* PC max. must not be exceeded.
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Output capacitance
Transition frequency
Symbol
Testconditons
VCBO IC = -100 ìA
VCEO IC = -1 mA
VEBO IE = -100 ìA
ICBO VCB = -20 V
IEBO VEB = -4 V
VCE(sat) IC = -100 mA, IB = -10 mA
hFE VCE = -3 V, IC = -10mA
Cob VCB = -10 V, IE = 0A, f = 1MHz
fT VCE = -5 V, IE = 20 mA, f = 100MHz
Min Typ Max Unit
-40
V
-32
V
-5
V
-1
A
-1
A
-0.4 V
82
390
7
pF
200
MHz
hFE Classification
Marking
Rank
hFE
HP
P
82 180
HQ
Q
120 270
HR
R
180 390
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