2SA1035_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1035
TransistIoCrs
Features
● Low noise voltage NV.
● High foward current transfer ratio hFE.
● Complementary to 2SC2406.
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-55
V
VCEO
-55
V
VEBO
-5
V
IC
-50
mA
ICP
-100
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emittercut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Noise voltage
Transition frequency
Symbol
Test Conditions
Min Typ Max Unit
VCBO Ic= -100 μA， IE=0
-55
VCEO Ic= -2 mA， IB=0
-55
V
VEBO IE= -100μA， IC=0
-5
ICBO VCB= -50 V , IE=0
-100 nA
ICEO VCE= -40 V , IB=0
-1 uA
IEBO VEB= -5V , IC=0
-100 nA
VCE(sat) IC=-100 mA, IB=-10mA
-0.6
VBE(sat) IC=-100 mA, IB=-10mA
-1.2 V
VBE VBE=-1V, IC=-100mA
-1.0
hFE VCE= -5V, IC= -2mA
180
700
NV
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100kΩ , Function = FLAT
150 mV
fT
VCB= -5V, IE= -2mA,f=200MHz
200
MHz
■ Classification of hfe
Type
2SA1035-R
Range
180-360
Marking
HR
2SA1035-S
260-520
HS
2SA1035-T
360-700
HT
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