2SA1022 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

SMD Type
TransistIoCrs
Silicon PNP Epitaxial Planar Type
2SA1022
Features
High transition frequency fT.
Mini type package,allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-30
V
VCEO
-20
V
VEBO
-5
V
IC
-30
mA
PC
200
mW
Tj
150
Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
Symbol
Testconditons
ICBO VCB = -10 V, IE = 0
ICEO VCE = -20 V, IB = 0
IEBO VEB = -5.0 V, IC = 0
hFE VCE = -10 V, IC = -1 mA
VCE(sat) IC = -10 mA, IB = -1 mA
VBE VCE =-10 V, IC = -1 mA
fT VCB = -10 V, IE = 1 mA f = 200 MHz
NF VCB = -10 V, IE = 1 mA f = 5 MHz
Zrb VCB = -10 V, IE = 1 mA f = 2 MHz
Cre VCE = -10 V, Ic = -1 mA f = 10.7 MHz
Min Typ Max Unit
-0.1 ìA
-100 ìA
-10 ìA
70
220
-0.1
V
-0.7
V
150 300
MHz
2.8
dB
22
Ù
1.2
pF
hFE Classification
Marking
hFE
EB
70 140
EC
110 220
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