2SA1015 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)

SMD Type
TransistIoCrs
PNP Transistor
2SA1015
Features
High voltage and high current
VCEO:=-50V(min.),IC=-150mA(max.)
Low niose: NF=1dB(Typ.) at f=1KHz
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-5
V
IC
150
mA
PC
200
mW
TJ
125
Tstg
-55 to 125
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Testconditons
Ic= -100 A, IE=0
Ic= -0.1mA, IB=0
IE= -100 A, IC=0
VCB=-50V , IE=0
VCE= -50V , IB=0
VEB=- 5V , IC=0
VCE=-6V, IC= -2mA
IC=-100 mA, IB= -10mA
IC=-100 mA, IB= -10mA
VCE=-10V, IC= -1mA,f=30MHz
Min Typ Max Unit
-50
V
-50
V
-5
V
-0.1
A
-0.1
A
-0.1
A
130
400
-0.3 V
-1.1 V
80
MHz
hFE Classification
Marking
Rank
hFE
BA
L
H
130 200
200 400
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