2SA1013_15 Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
PNP Transistors
2SA1013
Transistors
■ Features
● High voltage
● Large continuous collector current capability
1.70 0.1
0.42 0.1
0.46 0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
T hermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
R θJA
TJ
Tstg
Rating
-160
-160
-6
-1
0.5
250
150
-55 to 150
Unit
V
A
W
℃/W
℃
1.Base
2.Collector
3.Emitter
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO VCB= -150 V , IE=0
IEBO VEB= -6V , IC=0
VCE(sat) IC=-500 mA, IB=-50mA
VBE(sat) IC= -500 mA, IB=- 50mA
VBE VCE= -5V, IC= -5mA
hFE VCE= -5V, IC= -200mA
fT
VCE= -5V, IC= -200mA
Min Typ Max Unit
-160
-160
V
-6
-1
uA
-1
-1.5
-1.2 V
-0.75
60
320
15
MHz
■ Classification of hfe
Type
2SA1013-R
Range
60-120
Marking
1013R
2SA1013-O
100-200
1013O
2SA1013-Y
160-320
1013Y
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