2PB709AW Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP general purpose transistor

SMD Type
TransistIoCrs
PNP General Purpose Transistor
2PB709AW
Features
High collector current (max. 100 mA).
Low collector-emitter saturation voltage (max. 500 mV).
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient
Symbol
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Tamb
Rth j-a
Rating
-45
-45
-6
-100
-200
200
-65 to +150
150
-65 to +150
625
Unit
V
V
V
mA
mA
mW
K/W
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
2PB709AQW
2PB709ARW
2PB709ASW
Collector-emitter saturation voltage
Collector capacitance
Transition frequency
2PB709AQW
2PB709ARW
2PB709ASW
* Pulse test: tp 300 ìs; ä 0.02.
Symbol
Testconditons
ICBO IE = 0; VCB = -45 V
IE = 0; VCB = -45 V; Tj = 150
IEBO IC = 0; VEB = -5 V
hFE IC = -2 mA; VCE = -10 V
VCE(sat) IC = -100 mA; IB = -10 mA; *
Cc IE = ie = 0; VCB = -10 V; f = 1 MHz
fT IC = -1 mA; VCE = -10 V;f = 100 MHz
hFE Classification
TYPE
Marking
2PB709AQW 2PB709ARW 2PB709ASW
N5
N7
N9
1 Emitter
2 Base
3 Collector
Min Typ Max Unit
-10 nA
-5 ìA
-10 nA
160 260
210 340
290 460
-500 mV
5 pF
60
MHz
70
80
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