2N7002_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET

SMD Type
MOSFET
N-Channel Enhancement MOSFET
Features
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
2N7002
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
Unit: mm
0.1 ^+0.05
-0.01
Absolute Maximum Ratings Ta=25
Parameter
Drain-Source voltage
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics Ta = 25
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-threshold voltage
Drain-source on-resistance
On-state drain current
Forward tran conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on Time
Turn-off Time
Drain-source on-voltage
Diode forward voltage
Marking
Marking
702
Symbol
Rating
Unit
VDS
60
V
ID
115
mA
PD
225
mW
TJ
150
Tstg
-55 to 150
1.₁Ba_Gs_Ae_TE
2.₂Em_Si_Ot_Ut_Re_Cr_E
3.3coDlRlAeIcNtor
Symbol
VDSS
IDSS
lGSS
VGS(th)
rDS(0n)
ID(on)
gts
Ciss
COSS
CrSS
td(0n)
td(off)
VDS(on)
VSD
Testconditions
VGS=0 V, ID=10 0 µA
VDS=60 V, VGS=0 V
VDS=0 V, VGS= 25 V
VDS=VGS, ID=250 µA
VGS=10 V, ID=500 mA
VGS=5 V, ID=50 mA
VGS=10 V, VDS=7 V
VDS=10 V, ID=200 mA
VDS=25 V, VGS=0 V, f=1 MHz
VDD=25 V, RL=50
ID=500 mA,VGEN=10 V
RG=25
VGS=10V, ID =500mA
VGS=5V, ID =50mA
IS=115 mA, VGS=0 V
Min Typ Max Unit
60
V
80 nA
80 nA
1
2.5 V
7.5
7.5
500
mA
80
ms
50
25 pF
5
20
ns
40
3.75 ^V
0.375 V
0.55
1.2 V
www.kexin.com.cn ¹