2N7002T Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SMD Type
MOSFET
N-Channel MOSFET
2N7002T
■ Features
● VDS (V) = 60V
● ID = 115mA
● RDS(ON) ＜ 5Ω (VGS = 10V)
● RDS(ON) ＜ 7Ω (VGS = 5V)
SOT-523
1.6 +0.1
-0.1
1.0 +0.1
-0.1
0.2 +0.05
-0.05
2
1
U nit: m m
0.15±0.05
3
0.5 ^+0.1
-0.1
0.3±0.05
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25℃
■
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
PD
RthJA
TJ
Tstg
Rating
60
±20
115
150
833
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(On)
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-Off DelayTime
ID(ON)
gFS
Ciss
Coss
Crss
td(on)
td(off)
Drain-source on-voltage
VDS(on)
Diode Forward Voltage
VSD
Test Conditions
ID=250μA, VGS=0V
VDS=60V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
VGS=10V, ID=500mA
VGS=5V, ID=50mA
VGS=10V, VDS=7V
VDS=10V, ID=0.2A
VGS=0V, VDS=25V, f=1MHz
VDD = 25V, ID = 0.5A, VGEN= 10V
RL = 50Ω, RGEN = 25Ω
VGS=10V, ID=500mA
VGS=5V, ID=50mA
Is=115mA, VGS=0 V
Min Typ Max Unit
60
V
80 nA
±80 nA
1
2.5 V
5
Ω
7
500
mA
80
mS
50
25 pF
5
20
ns
40
3.75
0.375 V
0.55
1.2
■ Marking
Marking
K72
www.kexin.com.cn ¹