2N7002K Datasheet, PDF (1/1 Pages) Vishay Siliconix – N-Channel 60-V (D-S) MOSFET

SMD Type
MOSFET
N-Channel Enhanceent Mode
Field Effect Transistor
2N7002K
Features
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta=25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
Drain Current -Pulsed
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
300
mA
ID
800
mA
PD
350
mW
R JA
357
W
Tj, TSTG
-65 to +150
Unit: mm
0.1+0.05
-0.01
1.B₁a_Gse_ATE
2.₂Em_Si_Otte_Ur_RCE
3.3coDlleRctAorIN
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking
Marking
K7K
Symbol
Testconditons
VDSS VGS = 0V, ID = 10 A
IDSS VDS = 60V, VGS = 0V
IGSS VGS = 20V, VDS = 0V
VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 0.5A
RDS (ON)
VGS = 5V, ID = 0.05A
|Yfs| VGS = 10V, VDS = 0.2V
Ciss
Coss VDS = 25V, VGS = 0V,f = 1.0MHz
Crss
Min Typ Max Unit
60
V
1.0
A
10 A
1.0 1.6 2.5 V
2.0
3.0
80
ms
50 pF
25 pF
5.0 pF
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