2N7002E_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Enhancement MOSFET

SMD Type
N-Channel Enhancement MOSFET
2N7002E
MOSFET
Features
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Absolute Maximum Ratings Ta=25
Parameter
Drain-Source Voltage
Drain-Gate Voltage RGS≤1.0MΩ
Gate-Source Voltage -Continuous
-Pulsed
Continuous Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Junction and Storage Temperature Range
Electrical Characteristics Ta = 25 ℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = 25
@ TC = 125
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance @ Tj = 25
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
Marking
Marking
703
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
Unit: mm
1
2
0.95 +0.1
-0.1
1.9 ^+0.1
-0.1
0.1 +0.05
-0.01
Symbol
VDS
VDGR
VGS
ID
PD
RthJA
TJ
Tstg
Rating
60
60
±20
±40
240
300
417
150
-55 to 150
Unit
V
mA
mW
℃/W
℃
1.₁Ba_Gs_Ae_TE
2.₂Em_Si_Ot_Ut_Re_Cr_E
3 DRAIN
Symbol
Testcondit io ns
Min
VDSS VGS = 0V, ID = 100u A
60
IDSS
VDS = 60V, VGS = 0V
IGSS VGS = 15V, VDS = 0V
VGS(th) VDS = VGS, ID = 250 uA
1.0
RDS (ON)
VGS = 10V, ID = 250mA
VGS = 4.5V, ID = 200mA
ID(ON) VGS = 10V, VDS = 7.5V
0.8
gFS
VDS =10V, ID = 0.2A
80
Ciss
Coss VDS = 25V, VGS = 0V,f = 1.0MHz
Crss
tD(ON)
tD(OFF)
VDD = 30V, ID = 0.2A,RL = 150 ,VGEN
= 10V,RGEN = 25
Typ Max Unit
70
V
1.0
A
500
10 uA
2.5 V
1.6 3
2.0 4
1.0
A
mS
22 50 pF
11 25 pF
2.0 5.0 pF
7.0 20 ns
11 20 ns
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