1SV322 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

SMD Type
Silicon Epitaxial Planar Diode
1SV322
Diodes
Features
High Capacitance Ratio:C1V/C4V=4.3(Typ.)
Low Series Resistance:rs=0.4 (Typ.)
Useful for Small Size Tuner
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VR
10
V
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
P aram eter
Reverse Voltage
Reverse Current
Capacitance
Capacitance Ratio
Series Resistance
Symbol
Conditions
Min
Typ
Max
Unit
VR
IR = 1 A
10
V
IR
VR = 10 V
3
nA
C1V
f = 1 MHz;VR = 1 V
26.5
C4V
f = 1 MHz;VR = 4 V
6
29.5
pF
7.1
C1/C4V
4
4.3
rs
VR = 4V, f = 470 MHz
0.4
0.8
Note
1.Signal level when capacitance is measured:Vsig = 500mVrms
Marking
Marking
V7
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