1SV313 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (VCO FOR UHF BAND RADIO)

SMD Type
Silicon Epitaxial Planar Diode
1SV313
Diodes
Features
High Capacitance Ratio:C0.5V/C0.25V=2.1(Typ.)
Low Series Resistance:rs=0.35 (Typ.)
Useful for Small Size Tuner
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VR
10
V
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
P aram eter
Reverse Voltage
Reverse Current
Capacitance
Capacitance Ratio
Series Resistance
Symbol
VR
IR
C0.5V
C0.25V
C0.5V/C0.25V
rs
Conditions
IR = 1 A
VR = 10 V
f = 1 MHz;VR = 0.5 V
f = 1 MHz;VR = 0.25 V
VR = 1V, f = 470 MHz
Min
10
7.3
2.75
2.4
Typ
2.5
0.35
Max
3
8.4
3.4
Unit
V
nA
pF
Marking
Marking
V6
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