1SV245 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – VARIABLE CAPACITANCE DIODE (UHF SHF TUNING)

SMD Type
Silicon Epitaxial Planar Diode
1SV245
Diodes
Features
High Capacitance Ratio:C2V/C25V = 5.7(Typ.)
Low Series Resistance:rs = 1.2 (Typ.)
Excellent C-V Characteristics,and Small Tracking Error.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VR
30
V
VRM
35(RL = 10 K )
V
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
P aram eter
Sym bol
Conditions
M in
Typ
Max
Unit
Reverse Voltage
VR
IR = 1 A
30
V
Reverse Current
IR
VR = 28 V
10
nA
Capacitance
C2V
C25V
f = 1 MHz;VR = 2 V
f = 1 MHz;VR = 25 V
3.31
0.61
4.55
pF
0.77
Capacitance Ratio
C2V/C25V
5
5.7
6.5
Series Resistance
rs
VR = 1V, f = 470 MHz
1.2
2.0
Note :
Unites are com pounded in one package and are m athed to 6.0%
C (M a x.)-C (M in .)
C (M in .)
(VR=2~25V)
0.06
Marking
Marking
T3
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