1SV229 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – VARIABLE CAPACITANCE DIODE (VCO FOR UHF BAND RADIO)

SMD Type
Silicon Epitaxial Planar Diode
1SV229
Diodes
Features
Ultra low series resistance: rs = 0.2 (typ.)
Useful for small size set
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VR
15
V
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
P aram eter
Reverse Voltage
Reverse Current
Capacitance
Capacitance Ratio
Series Resistance
Sym bol
Conditions
M in
Typ
Max
Unit
VR
IR = 1 A
15
V
IR
VR = 15 V
3
nA
C2V
f = 1 MHz;VR = 2 V
14
15
16
pF
C10V
f = 1 MHz;VR = 10 V
5.5
6
6.5
C2V/C10V
2
2.5
rs
VR = 5V, f = 470 MHz
0.2
0.4
Marking
Marking
T8
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