1SV216 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – VARIABLE CAPACITANCE DIODE (TV VHF UHF TUNER AFC)

SMD Type
Silicon Epitaxial Planar Diode
1SV216
Diodes
Features
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
VR
30
V
VRM
35 (RL = 10K )
V
Tj
125
Tstg
-55 to +125
Electrical Characteristics Ta = 25
P aram eter
Reverse Voltage
Reverse Current
Capacitance
Capacitance Ratio
Series Resistance
Sym bol
VR
IR
C2V
C10V
C2V/C10V
rs
Conditions
IR = 1 A
VR = 28 V
f = 1 MHz;VR = 2 V
f = 1 MHz;VR = 10 V
VR = 5V, f = 470 MHz
M in
30
10.5
3.3
2.5
Typ
0.55
Max
10
16
5.7
3.4
1.2
Unit
V
nA
pF
Marking
Marking
T4
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