1SV214 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – BARIABLE CAPACITANCE DIODE (TV TUNING)

SMD Type
Silicon Epitaxial Planar Diode
1SV214
Diodes
Features
High Capacitance Ratio:C2V/C25V=6.5(Typ.)
Low Series Resistance:rs=0.4 (Typ.)
Excellent C-V Characteristics,and Small Tracking Error.
Useful for Small Size Tuner.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
P aram eter
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
VR
VRM
Tj
Tstg
Value
30
35 (RL = 10K )
125
-55 to +125
Unit
V
V
Electrical Characteristics Ta = 25
Param eter
Sym bol
Conditions
M in
Typ
Max
Unit
Reverse Voltage
VR
IR = 1 A
30
V
Reverse Current
IR
VR = 28 V
10
nA
Capacitance
C2V
C25V
f = 1 MHz;VR = 2 V
f = 1 MHz;VR = 25 V
14.16
2.11
16.25
pF
2.43
Capacitance Ratio
C2V/C25V
5.9
6.5
7.15
Series Resistance
rs
VR = 5V, f = 470 MHz
0.4
0.55
Note :
Available in m atched group for capacitance to 2.5% .
C (M a x.)-C (M in .)
C (M in .)
(VR=2~25V)
0.025
Marking
Marking
T1
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