1SS394 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING APLICATION)

SMD Type
Diodes
HIGH SPEED SWITCHING APPLICATION
1SS394
Features
Small package
Low forward voltage :VF =0.23V(Typ).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maxim um Ratings Ta = 25
P aram eter
Maximum(Peak) Reverse Voltage
Reverse Voltage
Maximum(Peak) Forward Current
Average Rectified Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Poerating Temperature
Symbol
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Topr
Rating
15
10
200
100
1
150
125
-55 to +125
-40 to +100
Unit
V
V
mA
mA
A
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Continuous reverse voltage
VF
Reverse current
IR
Total capacitance
CT
Test Conditions
IF = 1 mA
IF = 5 mA
IF = 100 mA
VR = 40 V
VR = 0, f = 1.0 MHz
Min
Typ
Max
Unit
0.18
0.23
0.35
V
0.35
0.5
20
A
20
40
pF
Marking
Marking
S9
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