1SS392 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

SMD Type
Diodes
LOW VOLTAGE HIGH SPEED SWITCHING
1SS392
Features
Small package
Low forward voltage :VF =0.54V(Typ).
Low reverse current :IR =5 A(Max).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Maximum(Peak) Reverse Voltage
Reverse Voltage
Maximum(Peak) Forward Current
Average Rectified Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Poerating Temperature
* Unit Rating.Total Rating = Unit Rating 1.5.
Electrical Characteristics Ta = 25
Parameter
Symbol
Continuous reverse voltage
VF
Reverse current
IR
Total capacitance
CT
Symbol
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Topr
Rating
45
40
300*
100*
1*
150
125
-55 to +125
-40 to +100
Unit
V
V
mA
mA
A
mW
Test Conditions
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 40 V
VR = 0, f = 1.0 MHz
Min
Typ
0.28
0.36
0.54
18
1.Base
2.Emitter
3.collector
Max
Unit
0.3
V
0.6
5
A
25
pF
Marking
Marking
R9
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