1SS389 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (HIGH SEPPD SWITCHING APPLICATION)

SMD Type
Diodes
HIGH SPEED SWITCHING APPLICATION
1SS389
Features
Small Package
Low Forward Voltage VF = 0.23V(TYP.) @IF = 5 mA
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute Maximum Ratings Ta = 25
Characteristic
Symbol
Rating
Unit
Maximum (Peak) reverse voltage
VRM
15
V
Reverse voltage
VR
10
V
Maximum (Peak) forward current
IFM
200
mA
Average forwrad current
IO
100
mA
Surge current (10 ms)
IFSM
1
A
Power dissipation
P*
150
mW
Junction temperature
Tj
125
Storage temperature range
Tstg
-55 to + 125
Operating temperature range
To pr
-44 to +100
* : Mounted on a glass epoxy circuit borad of 20 × 20mm,pad dimension of 4 ×4mm.
Electrical Characteristics Ta = 25
Characteristic
Symbol
Continuous forward voltage
VF
Reverse current
IR
Total capacitance
CT
Conditions
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 10 V
VR = 0 V, f = 1 MHz
Min
Typ
Max
Unit
0.18
0.23
0.3
V
0.35
0.5
20
A
20
40
pF
Marking
Marking
S4
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