1SS383 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE LOW VOLTAGE HIGH SPEED SWITCHING

SMD Type
Low Voltage High Speed Switching
1SS383
Diodes
Features
Composed of 2 independent diodes.
Low forward voltage: VF (3) = 0.54V (typ.)
Low reverse current: IR = 5 A (max)
SOT-343
Unit: mm
Absolute Maxim um Ratings Ta = 25
Param eter
Maxim um (peak) reverse voltage
Reverse voltage
Maxim um (peak) forward current
Average forward current
Surge current (10 m s)
Power dissipation
Junction tem perature
Storage tem perature range
Operating tem perature range
Note
1.Unit Rating.Total Rating = Unit Rating 1.5
Sym bol
VR M
VR
IFM
IO
IFSM
P
Tj
T stg
Topr
Rating
85
80
300⁽¹⁾
100⁽¹⁾
2⁽¹⁾
150
125
-55 to +125
-40 to +100
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Param eter
Forward voltage
Reverse current
Total capacitance
Sym bol
V F (1)
V F (2)
V F (3)
IR
CT
Conditions
IF = 1 m A
IF = 10 m A
IF = 100 m A
VR = 40 V
VR=0 V,f=1 MHz
M in
Typ
Max
0.28
0.36
0.54
0.60
5
18
25
Unit
V
A
pF
Marking
Marking
A4
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