1SS379 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (GENERAL PURPOSE RECTIFIER APPLICATIONS)

SMD Type
Silicon Epitaxial Planar Diode
1SS379
Diodes
Features
Low forward voltage :VF=1.0V(Typ.)
Low reverse current: IR=0.1nA(Typ.)
Small total capacitance: CT=3.0pF (Typ.)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Maximum (peak) reverse voltage
Reverse voltage
Average forward current *
Maximum (peak) forward current *
Surge current (10 ms) *
Power dissipation
Junction Temperature
Storage Temperature
* Unit Rating. Total Rating=Unit Rating X0.7
Symbol
Rating
Unit
VRM
85
V
VR
80
V
IO
100
mA
IFM
300
mA
IFSM
2
A
P
150
mW
Tj
125
Tstg
-55 + 125
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Total capacitance
Symbol
VF(1)
IR
CT
Test Conditions
IF = 100mA
VR = 80V
VR = 0, f = 1.0 MHz
Min
Typ
Max
Unit
1.0
1.3
V
0.1
10
A
3.0
6.0
pF
Marking
Marking
P9
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