1SS378 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (HGIH SPEED SWITCHING)

SMD Type
HIGH SWITCHING DIODE
1SS378
Diodes
Features
Low forward voltage:VF(3) = 0.23 V(Typ) @ IF = 5 mA
Absolute Maxim um Ratings Ta = 25
P aram eter
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward Current
Surge current (10 ms)
Power dissipation
Junction Temperature
Storage Temperature range
Operating temperature range
(*) Unit rating.Total rating = Unit rating 1.5
Symbol
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Topr
Rating
85
80
300(*)
100(*)
2(*)
100
125
-55 to +125
-40 to +100
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Total capacitance
Symbol
VF(1)
VF(2)
VF(3)
IR
Ct
Test Conditions
IF = 1 mA
IF = 5 mA
IF = 100 mA
VR = 10 V
VR = 0, f = 1.0 MHz
Min
Typ
Max
Unit
0.18
0.23
0.3
V
0.35
0.5
20
A
20
40
pF
Marking
Marking
O9
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