1SS372 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING APPLICATION)

SMD Type
Diodes
Silicon Epitaxial Schottky Barrier Type
1SS372
Features
Small package
Low forward voltage : VF = 0.23V (typ.) @ IF=5mA
1 ANODE
2 CATHODE
3 CATHODE/ANOD
Absolute Maximum Ratings Ta = 25
Parameter
Maximum (Peak) reverse voltage
Reverse voltage
Average forward current
Maximum (Peak) forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
Operating Temperature Range
*Unit Rating .Total Rating= Unit RatingX0.7
Symbol
Rating
Unit
VRM
15
V
VR
10
V
IO
100 *
mA
IFM
200 *
mA
IFSM
1*
A
P
100
mW
Tj
125
Tstg
-55 to +125
Topr
-40 to 100
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Total capacitance
Symbol
Testconditons
IF = 1mA
VF IF = 5mA
IF = 100mA
IR VR = 10V
CT VR = 0, f = 1MHz
Min Typ Max Unit
0.18
0.23 0.30 V
0.35 0.50
20 ìA
20 40 pF
Marking
Marking
N9
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