1SS369 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

SMD Type
Diodes
LOW VOLTAGE HIGH SPEED SWITCHING
1SS369
Features
Small Package
Low forward voltage :Vf(3) = 0.54V(TYP.)
Low reverse current :IR = 5 A(MAX.)
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute Maximum Ratings Ta = 25
Characteristic
Symbol
Rating
Maximum (Peak) reverse voltage
VRM
45
Reverse voltage
VR
40
Maximum (Peak) forward current
IFM
300
Average forwrad current
IO
100
Surge current (10 ms)
IFSM
1
Power dissipation
P*
150
Junction temperature
Tj
125
Storage temperature range
Tst g
-55 to + 125
Operaring temperature range
To pr
-40 to + 100
* : Mounted on a glass epoxy circuit borad of 20 20mm,pad dimension of 4
Unit
V
V
mA
mA
A
mW
4mm.
Electrical Characteristics Ta = 25
Characteristic
Symbol
Continuous forward voltage
VF
Reverse current
IR
Total capacitance
Cd
Conditions
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 40 V
VR = 0 V, f = 1 MHz;
Min
Typ
Max
Unit
0.28
0.36
V
0.54
0.6
5
A
18
25
pF
Marking
Marking
S3
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