1SS362 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

SMD Type
■ Features
● Fast Switching Speed
● Low Forward Voltage
● Fast Reverse Recovery Time
● Small Total Capacitance
Switching Diodes
1SS362
SOT-523
1.6 +0.1
-0.1
1.0 +0.1
-0.1
0.2 +0.05
-0.05
2
1
Diodes
U nit: m m
0.15±0.05
3
0.5 ^+0.1
-0.1
0.3±0.05
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Peak Reverse Voltage
Reverse Voltage
Average Rectified Output Current
Forward Continuous Current
Peak Forward Surge Current @ t=10ms
Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
VRM
VR
IO
IFM
IFSM
Pd
TJ
Tstg
Rating
85
80
80
240
1
100
125
-55 to 125
■ Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse voltage leakage current
Junction capacitance
Reverse recovery time
Symbol
Test Conditions
VR IR= 100uA
VF1 IF= 1mA
VF2 IF= 10 mA
VF3 IF= 100 mA
IR1 VR= 30 V
IR2 VR= 80 V
Cj VR= 0 V, f= 1 MHz
trr
IF=10mA
■ Marking
Marking
C3
Unit
V
mA
A
mW
℃
Min Typ Max Unit
80
0.63
V
0.75
1.2
0.1
uA
0.5
3
pF
4 ns
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