1SS344 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

SMD Type
Diodes
ULTRA HIGH SPEED SWITCHING APPLICATION
1SS344
Features
Low forward voltage: VF(3) = 0.50V(Typ).
Fast reverse recovery time: trr = 20ns(Typ).
High average forward current: IO = 0.5A(Max).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maxim um Ratings Ta = 25
P aram eter
Maximum(Peak) Reverse Voltage
Reverse Voltage
Maximum(Peak) Forward Current
Average Rectified Current
Surge Current (10 ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
Poerating Temperature
Symbol
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Topr
Rating
25
20
1500
500
5
200
125
-55 to +125
-40 to +100
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Symbol
Continuous reverse voltage
VF
IR
Reverse current
IR
capacitance
Ct
Reverse recovery time
trr
Test Conditions
IF = 10 mA
IF = 100 mA
IF = 500 mA
VR = 30 V
VR = 80 V
VR = 0, f = 1.0 MHz
IF = 30 mA
Min
Typ
0.30
0.38
0.50
120
20
1.Base
2.Emitter
3.collector
Max
Unit
V
0.55
20
A
100
pF
ns
Marking
Marking
H9
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