1SS321 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)

SMD Type
Diodes
LOW VOLTAGE HIGH SPEED SWITCHING
1SS321
Features
Low forward voltage: VF = 0.42 V(Typ)
Low reverse current: IR =500 nA(Max)
Small packag : SC-59(SOT-23MOD)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
P aram eter
Maximum (Peak) reverse voltage
Reverse voltage
Maximum (Peak) forward current
Average forward current
Surge current (t = 10 ms)
Power dissipation
Junction temperature
Storage temperature range
Note
Unit Rating.Total rating = Unit Rating
Symbol
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
1.5
Rating
12
10
150 (Note 1)
50 (Note 1)
1000 (Note 1)
150
125
-55 to +125
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
IF = 1 mA
Forward voltage
VF
IF = 10 mA
IF = 50 mA
Reverse current
IR
VR =10 V
Total capacitance
CT
VR=0 V,f=1 MHz
Note
Difference between 2 Devices in 1 package
Unit
V
V
mA
mA
mA
mW
Typ
0.32
0.42
0.63
0.32
1.Base
2.Emitter
3.collector
Max
1.0
500
4.5
Unit
V
A
pF
Marking
Marking
F9
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