1SS308 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

SMD Type
Diodes
Ultra High Speed Switching Applications
1SS308
Features
Low forward voltage: VF (3) = 0.92V (typ.)
Fast reverse recovery time:trr = 1.6ns(typ.)
Small total Capacitance:CT = 2.2pF(typ.)
5
4
1
2
3
Unit: mm
Absolute M axim um Ratings Ta = 25
Param eter
Maxim um (peak) reverse voltage
Reverse voltage
Maxim um (peak) forward current
Average forward current
Surge current (10 m s)
Power dissipation
Junction tem perature
Storage tem perature range
Note
1.Unit Rating.Total Rating = Unit Rating 1.5
Sym bol
VRM
VR
IFM
IO
IFSM
P
Tj
T stg
R a tin g
85
80
300⁽¹⁾
100⁽¹⁾
2⁽¹⁾
200
125
-55 to +125
U n it
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
P aram eter
Forward voltage
Reverse current
Total capacitance
Reverse recovery tim e
Sym bol
V F (1)
V F (2)
V F (3)
IR(1)
IR(2)
CT
trr
Conditions
IF = 1 m A
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR=0 V,f=1 MHz
IF = 10 mA
M in
Typ
Max
Unit
0.61
0.74
V
0.92
1.20
0.1
A
0.5
2.2
4.0
pF
1.6
4
ns
Marking
Marking
A1
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