1SS307 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (GENERAL PURPOSE RECTIFIER APPLICATIONS)

SMD Type
Silicon Epitaxial Planar Type
1SS307
Diodes
Features
Low forward voltage :VF =1.0 V(Typ)
Low reverse Current :IR= 0.1 nA (Typ)
Small total capacitance :CT = 3.0 pF(Typ)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Maximum (peak) reverse voltage
Reverse voltage
Average forward current
Maximum (peak) forward current
Surge current (10 ms)
Power dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VRM
35
V
VR
30
V
IO
100
mA
IFM
300
mA
IFSM
2
A
P
150
mW
Tj
125
Tstg
-55 + 125
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Total capacitance
Symbol
VF
IR
CT
Test Conditions
IF = 100 mA
VR = 30 V
VR = 0, f = 1.0 MHz
Min
Typ
Max
Unit
1.0
1.3
V
0.1
10
nA
3.0
6.0
pF
Marking
Marking
C9
www.kexin.com.cn ¹