1SS302 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

SMD Type
Diodes
ULTRA HIGH SPEED SWITCHING APPLICATIONS
1SS302
Features
Low forward voltage:VF(3) = 0.9 V(Typ)
Fast reverse recovery time:trr = 1.6 ns (Typ)
Small total capacitance:CT = 0.9 pF(Typ)
A b so lu te M a xim u m R a tin g s T a = 2 5
P aram eter
M axim um (peak) reverse voltage
R everse voltage
M axim um (peak) forw ard current
A verage forward current
S urge current (10 m s)
P ow er dissipation
Junction T em perature
S torage Tem perature
(*) U nit rating.T otal rating = U nit rating
Sym bol
VRM
VR
IFM
IO
IFSM
P
Tj
Tst g
1.5
R ating
85
80
300(*)
100(*)
2(*)
100
125
-55 to +125
U nit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF(1)
VF(2)
VF(3)
IR(1)
IR(2)
Ct
trr
Test Conditions
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0, f = 1.0 MHz
IF = 10 mA
Min
Typ
Max
Unit
0.60
0.72
V
0.90
1.2
0.1
A
0.5
0.9
4.0
pF
1.6
4.0
ns
Marking
Marking
C3
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