1SS300 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWTHCING PPLICATION)

SMD Type
Diodes
ULTRA HIGH SPEED SWITCHING APPLICATIONS
1SS300
Features
Small package
Low forward voltage
:VF(3) = 0.92 V(Typ)
Fast reverse recovery time :trr = 1.6 ns (Typ)
Small total capacitance
:CT = 2.2 pF(Typ)
Absolute Maximum Ratings Ta = 25
P aram eter
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
Junction Temperature
Storage Temperature range
(*) Unit rating.Total rating = Unit rating 1.5
Symbol
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Rating
85
80
300(*)
100(*)
2(*)
100
125
-55 to + 125
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF(1)
VF(2)
VF(3)
IR(1)
IR(2)
Ct
trr
Test Conditions
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0, f = 1.0 MHz
IF = 10 mA
Min
Typ
Max
Unit
0.61
0.74
V
0.92
1.2
0.1
A
0.5
2.2
4.0
pF
1.6
4.0
ns
Marking
Marking
A3
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