1SS295 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (UHF BAND MIXER APPLICATIONS)

SMD Type
UHF BAND MIXER APPLICATIONS
1SS295
Diodes
Features
Small Delat forward voltage: ÄVF = 10 mV(Max)
Small Delat total capacitance: ÄCT = 0.1pF(Max)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
A bsolute M axim um R atings T a = 25
P aram eter
R everse V oltage
Forw ard C urrent
Junction tem perature
S torage tem perature range
Sym bol
VR
IF
TJ
T stg
R ating
4
30
125
-30 to +125
U nit
V
mA
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF = 2 mA
0.25
0.32
V
Forward current
IF
VF =0.5 V
30
mA
Reverse current
IR
VR =0.5 V
25
A
Total capacitance
CT
VR=0.2 V,f=1 MHz
0.6
0.9
pF
Delat forward voltage
ÄVF
IF = 2 mA (Note 1)
10
mV
Delat total capacitance
ÄCT
VR=0 V,f=100 MHz (Note 1)
0.1
pF
Note
Difference between 2 Devices in 1 package
Marking
Marking
BH
www.kexin.com.cn ¹