1SS272 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

SMD Type
Diodes
Ultar High Speed Switching Applications
1SS272
Features
Low Forward Voltage:VF(3) =0.92 V(Typ.)
Fast Reverse Recovery Time:trr = 1.6 ns (Typ.)
Small Total Capacitance: CT = 0.9pF(Typ.)
Unit: mm
Absolute Maxim um Ratings Ta = 25
P aram eter
Maxim um (peak) reverse voltage
Reverse voltage
Maxim um (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
Junction tem perature
Storage temperature range
Note
1.Unit Rating.Total Rating = Unit Rating 1.5
Sym bol
VR M
VR
IFM
IO
IFSM
P
Tj
T stg
Rating
85
80
300⁽¹⁾
100⁽¹⁾
2⁽¹⁾
150
125
-55 to +125
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
P aram eter
Forward voltage
Reverse current
Total capacitance
Reverse recovery tim e
Sym bol
V F (1)
V F (2)
V F (3)
IR(1)
IR(2)
CT
rs
Conditions
IF = 1 mA
IF = 10 mA
IF = 100 mA
VR =30 V
VR =80 V
VR=0 V,f=1 MHz
IF = 10 mA
M in
Typ
Max
Unit
0.61
0.74
V
0.92
1.20
0.1
A
0.5
0.9
2.0
pF
1.6
4
ns
Marking
Marking
A1
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