1SS196 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

SMD Type
Diodes
ULTRA HIGH SPEED SWITCHING APPLICATION
1SS196
Features
Small Package
Low forward voltage :VF(3) = 0.9 V(Typ.)
Fast Reverse Recovery Time :trr = 1.6 ns(Typ.)
Small Total Capacitance :CT = 0.9pF(Typ.)
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maxim um Ratings Ta = 25
P aram eter
Peak Reverse Voltage
DC Reverse Voltage
Peak Reverse Voltage
Average Rectified Current
Surge Current (10 ms)
DC Forward Current
Junction Temperature
Storage Temperature Range
Sym bol
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Rating
85
80
300
100
2
150
125
-55 to + 125
Unit
V
V
mA
mA
A
mW
Electrical Characteristics Ta = 25
Parameter
Symbol
Continuous reverse voltage
VF
Reverse current
IR
Total capacitance
CT
Reverse recovery time
trr
Test Conditions
IF = 1.0 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0, f = 1.0 MHz
IF = 10 mA
Min
Typ
Max
Unit
0.6
0.72
V
0.9
1.2
0.1
A
0.5
0.9
3.0
pF
1.6
4.0
ns
Marking
Marking
G3
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