1SS181 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)

SMD Type
Diodes
ULTRA HIGH SPEED SWITCHING APPLICATION
1SS181
Features
Small Package
Low forward voltage :VF(3) = 0.92 V(Typ.)
Fast Reverse Recovery Time :trr = 1.6 ns(Typ.)
Small Total Capacitance :CT = 2.2pF(Typ.)
Absolute Maximum Ratings Ta = 25
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Peak Reverse Voltage
Average Rectified Current
DC Forward Current
Junction Temperature
Storage Temperature Range
* Unit Rating.Total Rating = Unit Rating 1.5.
Symbol
VRM
VR
IFM
IO
IF
Tj
Tstg
Rating
85
80
300*
100*
2*
125
-55 to+ 125
Electrical Characteristics Ta = 25
Parameter
Symbol
Continuous reverse voltage
VF
Reverse current
IR
Total capacitance
CT
Reverse recovery time
trr
Test Conditions
IF = 1.0 mA
IF = 10 mA
IF = 100 mA
VR = 30 V
VR = 80 V
VR = 0, f = 1.0 MHz
IF = 10 mA
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit
V
V
mA
mA
A
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Min
Typ
Max
Unit
0.61
0.74
V
0.92
1.2
0.1
A
0.5
2.2
4.0
pF
1.6
4.0
ns
Marking
Marking
A3
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