1PS88SB48 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diodes

SMD Type
Schottky Barrier Diodes
1PS88SB48
Diodes
Features
Ultra fast switching speed
Low forward voltage
Small SMD package
Guard ring protected
Absorbs very high surge pulse
Low capacitance.
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
Symbol
VR
IF
IFRM
IFSM
Tstg
Tj
Tamb
Rth j-a
Conditions
tp 1 s; ä 0.5
tp < 10 ms
SOT-363
1.3+0.1
-0.1
0.65
Unit: mm
0.3+0.1
-0.1
2.1+0.1
-0.1
0.1+0.05
-0.02
Min
Max
Unit
40
V
120
mA
120
mA
200
mA
-65
+150
150
-65
+150
416
K/W
Electrical Characteristics Ta = 25
Param eter
continuous forward voltage
Sym bol
VF
continuous reverse current
IR
diode capacitance
CT
Note
1. Pulse test: tp = 300 s; ä = 0.02.
C o n d itio n s
IF = 1 m A
IF = 10 m A
IF = 40 m A
VR = 30 V
VR = 80 V
VR=0 V,f=1 MHz
Max
380
500
1
1
10
5
U n it
mV
mV
V
A
pF
Marking
Marking
8t5
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