1PS79SB63 Datasheet, PDF (1/1 Pages) NXP Semiconductors – 5 V, 20 mA low Cd Schottky barrier diodes

SMD Type
Schottky barrier diodes
1PS79SB63
Diodes
Features
Very low diode capacitance
Very low forward voltage
Ultra small SMD plastic packages.
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Continuous reverse voltage
VR
5
V
Continuous forward current
IF
20
mA
Junction temperature
Tj
0.5
125
Ambient temperature
Tamb
-65
+125
Storage temperature
Tstg
-65
+150
Thermal resistance from junction to ambient
Rth(j-a)
450
K/W
Electrical Characteristics Ta = 25
P aram eter
Symbol
Forward voltage
VF
Reverse current
IR
Diode capacitance
Series inductance
Note
1.Pulse test: tp 300 s; ä
Cd
Ls
0.02.
Conditions
IF = 0.1 mA
IF = 1 mA
VR = 1 V
VR = 5 V
VR = 0 V; f = 1 MHz
M in
Typ
Max
Unit
160
200
mV
240
300
0.4
1
A
50
0.35
0.5
pF
0.6
nH
Marking
Marking
T1
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