1PS79SB40 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier diode

SMD Type
SCHOTTKY BARRIER DIODE
1PS79SB40
Diodes
Features
Very Low forward voltage
Guard ring protected
Ultra small plastic SMD package.
Low diode capacitance.
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forwrad current
storage temperature
junction temperature
operating ambient temperature
Symbol
VR
IF
IFSM
IFSM
Tst g
Tj
Tamb
Conditions
tp 1 s;ä 0.5
tp < 10 ms
Min
Max
Unit
40
V
120
mA
120
mA
200
mA
-65
+150
150
-65
+150
Electrical C haracteristics T a = 25
Param eter
Sym bol
continuous forward voltage
VF
IR
capacitance reverse current
diods capacitance
Cd
N o te
1. Pulse test: tp = 300 s, ä = 0.02.
Marking
Marking
T
C o n d itio n s
IF = 1 m A
IF = 10 m A
IF = 40 m A
VR = 30 V, note 1
VR = 40 V, note 1
VR = 0 V, f = 1 MHz
Max
380
500
1
1
10
5
U n it
mV
mV
V
A
pF
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